The experimental results showed that the Pd implantation can increase the solid-vapor surface energy of SiC substrate due to the high concentration of defects were formed and the SiC surface transformed partially from crystalline into amorphous after the Pd ion implantation. Moreover, the Pd implantation can reduce the equilibrium contact angle of Al-12Si(-2Mg)/SiC while that can increase?the contact angle of molten pure Al on SiC substrate to a certain extent with increasing Pd implantation dose. Furthermore, the wettabilities of molten/C-terminated SiC systems were grater than that of molten/Si-terminated SiC, which can be mainly attributed to the stability of C-terminated SiC substrate is much better than that of C-terminated SiC substrate at a high temperature. In addition, the system equilibrium contact angles were decreased with the Mg, Cu and Zn addition into alloy significantly, that could be explained by the increasing of interfacial interactions between molten and SiC to reduce the solid-liquid surface energy. In particular, for the Al-12Si/C(Si)-terminated SiC the equilibrium contact angle decreased gradually arrived at a stable value of ~20°, while the final contact of Al-10Si-10Zn/C-terminated SiC systems almost kept constant of ~26° after the Pd ion implantation.